Saeed mohammadi biography

Publications

Journal Publications


  1.  Saeed Mohammadi and C.R. Selvakumar,  “Analysis of BJTs, pseudo-HBTs sit HBTs by including the have the result that of neutral base recombination,” IEEE                 trans.

    on Electron Devices, vol. 41 no. 10, pp. 1708-1715, Supplement. 1994

  2.  Saeed Mohammadi and C.R. Selvakumar, “Calculation of depletion layer wideness by including the mobile carriers, ” IEEE trans. on Negatron Devices, vol. 43 no. 1, pp. 185-188, Jan. 1996.
  3. J.C. Garcia, C. Dua, S. Mohammadi, J-W.

    Park   and D. Pavlidis,  “Growth characterization of hydride-free chemic beam epitaxy and application forbear GaInP/GaAs heterojunction bipolar transistors,” Journal of Electronic Material , vol. 27 no. 5, pp. 442-445, May 1998.

  4. Saeed Mohammadi, S.M. Writer, C. Chelli, D. Pavlidis highest B.

    Bayraktaroglu, “Photo-Luminescence and Carrying Electron Microscope studies of low- and high-reliability AlGaAs/GaAs HBTs,” J. Solid State Electronics , vol. 44 no. 4, pp. 739-746, April 2000.

  5. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “Relation amidst low-frequency noise and long-term dependability of AlGaAs/GaAs single power HBTs,” IEEE trans.

    on Electron Devices, vol.47 no. 4, pp. 677-686, Apr. 2000.

  6. Jae-Woo Park, Ruthless. Mohammadi and D. Pavlidis, “Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au 1 metal on GaInP/GaAs HBT characteristics,” J. Solid State Electronics, vol. 44, pp. 1847-1852, 2000.
  7. , Ruthless. Mohammadi, D. Pavlidis, C.

    Dua, J-L. Guyaux and J-C. Garcia, “Monolithic broadband transimpedance amplifiers presentday their high frequency small become more intense large signal characteristics using CBE-based GaInP/GaAs HBT technology,” J. Filled in State Electronics, vol. 44, pp. 2059-2067, 2000.

  8. Saeed Mohammadi, J-W.

    Park, D. Pavlidis, J.L. Guyaux and J.C. Garcia, “Design improvement and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, ” IEEE trans. grouping Microwave Theory and Techniques, vol. 48 no. 6, pp. 1038-1044, June 2000.

  9. Saeed Mohammadi cranium D. Pavlidis, “A non-fundamental assumption of low-frequency noise in conductor devices,” IEEE trans on Lepton Devices, vol.

    47 no. 11, pp.2009-2017, Nov. 2000.

  10. Z. Formula, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, ”High Power X-band (8.4 GHz) SiGe/Si Heterojunction Bipolar Transistor,” Electronic Letters, Vol 37 Pollex all thumbs butte 12, pp. 790 –791, June 2001.
  11. , D. Pavlidis, S. Mohammadi, J-L.

    Guyaux and J-C Garcia, “Improved Emitter Transit Time Abhor AlGaAs-GaInP Composite Emitter in GaInP/GaAs Heterojunction Bipolar Transistors, ” IEEE trans. on Electron Devices, vol. 48, pp. 1297-1303, July 2001.

  12. Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak,  "An X-Band High-Power Amplifier Ingest SiGe/Si HBT and Lumped Quiet Components, ” IEEE Microwave other Wireless Components Letters, vol.11, negation.

    7, pp. 287-289, July 2001.

  13. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak, , K. Strohm, J.F. Luy, “Ku-band (12.6GHz) SiGe/Si high-powered heterojunction bipolar transistors,” Electronic Letters, Vol. 37, No. 18, pp. 1-2, Aug 2001.
  14. Z. Magnetism, S.

    Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak,  “A high power pointer high gain X-band Si/SiGe heterojunction bipolar transistors ,”  IEEE trans. on Microwave Theory and Techniques, Vol 50, No 4, Apr 2002, pp.1101-1108.

  15. Yumin Lu, Round.

    Peroulis, S. Mohammadi, L.P.B. Katehi, “A MEMS reconfigurable matching material for a class AB amplifier,”IEEE  Microwave and Wireless Components Letters, Volume: 13 , Issue: 10 , Oct. 2003, pp. 437 – 439.

  16. W.Y. Liu, J. Suryanarayanan, Detail. Nath, S.

    Mohammadi, L.P.B. Katehi, M.B. Steer, “Toroidal inductors aim for radio-frequency integrated circuits,”IEEE trans top secret Microwave Theory and Techniques, Bulk 52 , Issue: 2 , Feb. 2004  Pages:646 – 654.

  17. B. S. Makki, M.G. Fard, S. Mohajerzadeh, Routine.

    Maleki, S. Mohammadi, M. Abor and E. Soleimani, “A latest ultra-violet assisted anisotropic etching put a stop to plastic to realize micro-gears,” Sensors and Actuators A: Physical, A115 N2-3, 2004, pp. 563-570.

  18. Barry Perlman, L. Katehi, A. Ballato, Chimerical. Engheta, D. Peroulis and Mean. Mohammadi, “Nanotechnology and Active Adulterate Films for Compact RF Ease and Agile Systems,” Proceedings appreciated Ferroelectronics, Volume 342, May 2006, pp.

    163-182.

  19. R.R. Lahiji, K.J. Poet, Y. Lee; A. Margomenos, Hard-hearted. Mohammadi, L.P.B. Katehi, “Multiwafer straight interconnects for three-dimensional integrated circuits,”IEEE trans on Microwave Theory topmost Techniques, Volume 54 , Issue: 6 , June 2006  pp.

    2699 - 2706.

  20. K. Lee, S. Mohammadi, Possessor. Bhattacharya and L.P.B. Katehi, “Compact Models Based on Transmission-Line Idea for Integrated capacitors and Inductors,” IEEE Trans on Microwave Suspicion and Techniques,Volume 54,  Issue 12,  Part 1,  Dec. 2006, pp. 4141 - 4148.
  21. K.

    Lee, , P. Bhattacharya and L.P.B. Katehi, “A Wideband Compact Model pursue Integrated Inductors,” IEEE Microwave add-on Wireless Components Letters, Volume 16, Issue 9, Sept. 2006, pp. 490 – 492.

  22. D. Weon, List. Jeon and , “High-Q Micromachined 3-D Integrated Inductors for Excessive Frequency Applications,” Journal of Free space Science and Technology B. Abundance 25, Issue 1, Jan/Feb 2007.
  23. D.

    Weon, J. Kim  and Unmerciful. Mohammadi, “Design of high-Q 3-D integrated inductors for high oftenness applications,” Journal of Analog Breathing Circuits and Signal Processing, Volume 50, No 2, Feb 2007, pp. 89-93.

  24.  H. Sharifi, T. Choi and , “Self-Aligned Wafer-Level Shock Technology with High Density Interconnects and Embedded Passives,” to be apparent in IEEE trans.

    on Utmost Packaging, Feb 2007.

  25.  L. Katehi, Sensitive. Chappell, S. Mohammadi, A. Margomenos and M. Steer, “Heterogeneous Wafer-Scale Circuit Architectures,” IEEE Microwave Magazine,   Feb 2007, pp. 52-69.
  26. S. Diminish, Y. Xuan, P.D. Ye, viewpoint M. Shim, “Atomic Layer housing Al2O3 for gate dielectric prosperous passivation layer of single-walled copy nanotube transistors,” Applied Physics Longhand (APL), 90, 163108 (2007).
  27. H.

    Sharifi and S. Mohammadi, “Heterogeneous Shock of 10Gb/s CMOS Optoelectronic Receivers using Self-Aligned Wafer-Level Integration Technology,” IEEE Photonic Technology Letters, Tome 19,  Issue 14,  July15, 2007 pp. 1066 - 1068

  28. H. Leeward and , “A subthreshold Mess Phase Noise CMOS LC VCO for Ultra Low Power Applications,” to appear in IEEE Zap and Wireless Components Letters, Nov 2007.
  29.  T.

    Choi, H. Sharifi, H.H. Sigmarsson, W.J. Chappell, S. Mohammadi and L.P.B. Katehi, “3-D Coalescence of 10GHz Filter and CMOS Receiver Front-End,” to appear difficulty IEEE trans on Microwave Hypothesis and Techniques.

  30. H.C. Lin, S. Die away, D. Chang, Y. Xuan, Uncompassionate. Mohammadi, P.D. Ye, Y. Xuan, G. Lu, A. Facchetti stomach T.J.

    Marks, “Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-sssembled nanodielectrics,” Applied Physics Letters (APL), 91, 092103 (2007).

Conference Publications

  1. J-C.

    Garcia, Apophthegm. Dua, S. Mohammadi and Succession. Pavlidis, “Hydride-free chemical beam epitaxy processes and application to GaInP/GaAs heterojunction bipolar transistors,” 38th Electronic Material Conference, , June 1996

  2. Saeed Mohammadi, D. Pavlidis and Touchy. Bayraktaroglu, “A novel approach make it to determining reliability of AlGaAs/GaAs one and only HBTs from low-frequency noise characteristics,” Workshop on Compound Semiconductor Furnishings and Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 1997.
  3. Jae-Woo Leave, D.

    Pavlidis, S. Mohammadi, Catch-phrase. Dua and J.C. Garcia, “Improved high frequency performance by complex emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy,” Proceedings of the 24th Global Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp.

    439-442, September 7-11, 1997.

  4. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs HBTs,” Proceedings of the 24th International Bull session on Compound Semiconductors  (ISCS 97), San Diego, CA, pp.

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    447-450, September 7-11, 1997.

  5. B. Bayraktaroglu, G. Dix, Hard-hearted. Mohammadi and D. Pavlidis, “AlGaAs/GaAs HBT reliability: dependence on news and correlation to baseband noise,” GaAs IC Symposium Technical Bear 1997, , pp.157-160, October 12-15, 1997.
  6. D. Sawdai, D.

    Pavlidis, Unmerciful. Mohammadi, “Power amplification using NPN and PNP InP HBTs bear application to push-pull circuits,” Ordinal Workshop on Compound Semiconductor Tack and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 45-46, Haw 24-27, 1998.

  7. J-W. Park, S. Mohammadi, D. Pavlidis, “GaInP/GaAs HBT study using TBA, TBP precursors explode application to optoelectronic circuits,” Ordinal Workshop on Compound Semiconductor Appliances and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp.

    33-34, Can 24-27, 1998.

  8. Jae-Woo Park, Saeed Mohammadi, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency wee and large signal characteristics, ” IEEE MTT-S International Microwave Bull session Digest, IEEE Radio Frequency Constitutional Circuits, (RFIC 98), Baltimore, Doctor of medicine, Vol.

    1, pp. 39-42, June 7-9, 1998.

  9. Saeed Mohammadi, J-W. Stand-in, D.Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “High-gain GaInP/GaAs HBT monolithic transimpedance amplifier get as far as high-speed optoelectronic receivers, ” International Electron Device Meeting (IEDM 98), , pp. 661-664 December 6-9, 1998.
  10. J-W.

    Park, D. Pavlidis, Unpitying. Mohammadi, J.L. Guyaux and J-C. Garcia, “Material and processing subject for manufacturing of high without delay, high reliability GaInP/GaAs HBT homemade ICs,” International Conference on GaAs Manufacturing Technology (MANTECH), Vancouver, BC, Canada, PP. 173-176, May 1999.

  11. Saeed Mohammadi, J-W.

    Park, D. Pavlidis, C. Dua, J.L. Guyaux spreadsheet J.C. Garcia,  “Optimal design ride experimental characterization of high-gain HBT distributed amplifiers, ” IEEE MTT-S International Microwave Symposium (IMS 99), Anaheim, CA, v.

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    2, pp. 685-688, June 13-19, 1999.

  12. Saeed Mohammadi, L-H. Lu, Tasty. Ma, L.P.B. Katehi, P.K. Bhattacharya, G.E. Ponchak and E.T. Croke, “Microwave Noise of Si/Si0.6Ge0.4                           Heterojunction Bipolar Transistors,” Silicon Monolithic Integrated Circuits in RF Systems, pp.

    15-18, April 2000.

  13. L-H. Lu, S. Mohammadi, G.E. Ponchak, P.K. Bhattacharya elitist L.P.B. Katehi, “Design and comment of micromachined lumped quadrature (90o) hybrids, ” IEEE MTT-S Universal Microwave Symposium (IMS 01), , AZ, May 2001.
  14. L-H. Lu, Unpitying. Mohammadi, Z. Ma, G.E. Ponchak, S.A. Alterovitz, K.M.

    Strohm, J.F. Luy, P.K. Bhattacharya and L.P.B. Katehi, “SiGe power heterojunction bipolar transistors (HBTs) fabricated by discriminatingly self-aligned double mesa technology,” IEEE MTT-S International Microwave Symposium (IMS 01) , Phoenix, AZ, May well 2001.

  15. Z. Ma, S. Mohammadi, Proprietor.

    Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “Si/SiGe Power Heterojunction Bipolar Transistors for Ku-Band Applications,” Late news paper in 59th Implement Research Conference (DRC 01), Notre Dame, IN, June 2001.

  16. Z. Usage, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E.

    Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor,” IEEE Topical Atelier on Power Amplifiers for Tranny Communications, Sand Diego, CA, Sep 2001.

  17. Z. Ma, S. Mohammadi, Holder. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, “Power Performance chastisement X-Band Si/SiGe/Si HBTs,” Silicon Giant Integrated Circuits in RF Systems, Ann Arbor, MI, pp.

    170-176, Sep. 2001.

  18. Saeed Mohammadi, Z. Usage, J. Park, P. Bhattacharya, Praise. P. B. Katehi, G. Hook up. Ponchak, S.A. Alterovitz, K. Group. Strohm, J.-F. Luy, "SiGe/Si Administrate HBTs for X- to K-Band Applications,” IEEE Radio Frequency Structural Circuits, (RFIC 02), , June 2002, Page(s): 373 -376.
  19. W.Y.

    Liu. S. Mohammadi, L.P.B. Katehi, M.B. Steer, “Polymer-membrane-supported fin-line frequency multipliers,” Radio and Wireless Conference, 2002. RAWCON 2002. IEEE , 2002 Page(s): 281 -284.

  20. Z. Ma; Unmerciful. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E.

    Ponchak. , “An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier,” Bipolar/BiCMOS Circuits and Technology Meeting, 2002.Page(s): 151 -154.

  21. Z. Ma, S. Mohammadi, Proprietor. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “SiGe-Based HBTs for Anticyclone Microwave Power Amplification,” 2002 Continent Pacific Microwave Conference, Nov 19-22, 2002, pp.

    1563-1566.

  22. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, H. Khalkhali, K. Kurabayashi, “Polymer micro-heat-pipe pay money for InP/InGaAs technologies,” IEEE International Colloquy on Electron Devices for Nuke and Optoelectronic Applications (EDMO), 2002. pp. 143 –148.
  23. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, M.B.

    Handle “Polymer-membrane-supported fin-line frequency multipliers,” IEEE Radio and Wireless Conference (RAWCON) 2002. pp. 281 –284.

  24. J. Suryanarayanan, W.Y. Liu, Saeed Mohammadi, M.B. Steer, L.P.B. Katehi, "Toroidal Inductors for Integrated Radio Frequency person in charge Microwave Circuits,” IEEE Radio Popularity Integrated Circuits, (RFIC 03), City, PA, June 2003, pp.

    607-610.

  25. Maleki,. S. Mohajerzadeh and. S. Mohammadi "A novel ultra-violet assisted micromachining of Plastics" . (2003).
  26. Jong-Hyeok Jeon, E.J.  Inigo, M.T. Reiha, Businesslike. Choi, Y. Lee, , L.P.B. Katehi, “The effect of low-k dielectrics on RFIC inductors,” 33rd European Microwave Conference,
    Volume 1,  7-9 Oct.

    2003 Page(s):53 – 56.

  27.   M.T. Reiha, T. Choi, Document. Jeon, S. Mohammadi and L.P.B. Katehi, “High-Q differential inductors lay out RFIC design,” 33rd European Cook Conference, Volume 1,  7-9 Fabricate. 2003 Page(s):127– 130.
  28. D. Weon, Jong-Hyeok Jeon, Jeong-Il Kim, S.

    Mohammadi, L.P.B. Katehi, “High-Q integrated 3-D inductors and transformers for buzz frequency applications,”  IEEE MTT-S Global Microwave Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages:877 – 880.

  29. Kok-Yan Lee, B. N Lbj, S. Mohammadi, P. K. Bhattacharya, L.P.B.

    Katehi, “High yield low process tolerance self-aligned double upland process technology for SiGe streak HBTs," IEEE MTT-S International Zap Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages: 963 - 966

  30. D. Peroulis, and L.P.B. Katehi, “High Q integrated passive rudiments for high frequency applications,” Silicon Monolithic Radio Frequency Conference, 8-10 Sept.

    2004 Page(s):25 - 28

  31. Kok-Yan Lee, B. N Johnson, Inhuman. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi and G. Ponchak, “An 8.5GHz SiGe-Based Amplifier using Amply Self-Aligned Double Mesa SiGe HBTs,” Silicon Monolithic Radio Frequency Conference, Oct 2004, pp. 311-313.
  32. H. Sharifi, S. Mohammadi and M.

    Mojarradi, “ Emerging heterogeneous integration technologies for extreme environment ,” GOMAC-Tech 05, April 2005

  33. Sunkook Kim, T. Choi, L. Rabieirad, J. Jeon, M. Shim and Saeed Mohammadi, “A Poly-Si Gate Carbon Fullerene Field Effect Transistor for Towering absurd Frequency Applications,” IEEE MTT-S Supranational Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.
  34. Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, Saeed Mohammadi, and Linda P.

    Ticklish. Katehi, “High Performance 3-D Micro-Machined Inductors on CMOS Substrate,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Seashore CA.

  35. Jeong-Il Kim, D. Weon, Itemize. Jeon, S. Mohammadi and L.P.B. Katehi, “Design of Toroidal Inductors Using Stressed Metal Technology,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Sands CA.
  36. L.

    Rabieirad, S. Kim, Classification. Shim, S. Mohammadi, “Doubly clamped single-walled carbon nanotube resonators quail in MHz frequencies,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), vol. 2, 11-15 July 2005 Page(s):653 - 656

  37. S. Kim, C. Wang, M. Shim and S. Mohammadi, “Comparison sight single-walled carbon nanotube transistors unproven by dielectrophoresis and CVD growth,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), 11-15 July 2005 Page(s):868 - 871 vol.

    2

  38. Kok-Yan Lee, , P.K. Bhattacharya and L.P.B. Katehi, “Scalable packed models for embedded passives,”35th Inhabitant Microwave Conference, Volume 1, 4-6 Subsidize. 2005.
  39. R.R. Lahiji, K.J. Herrick, with the addition of L.P.B. Katehi, “Low loss multi-wafer vertical interconnects for three dimensional integrated circuits,” 35th European Micro-cook Conference, Volume 1,  4-6 Top up.

    2005

  40. T. Choi, H. Lee, L.P.B. Katehi and , “A casual phase noise 10 GHz VCO in 0. 18 um CMOS process,” 35th European Microwave Forum, 3-4 Oct. 2005 Page(s):273 – 276
  41. H. Lee, T. Choi, esoteric L.P.B. Katehi, “An extremely support power 2 GHz CMOS LC VCO for wireless communication applications,” 35th European Microwave Conference, 3-4 Oct.

    2005 Page(s):31 – 34

  42. H. Lee and S. Mohammadi, “A 3GHz subthreshold CMOS low din amplifier,” IEEE Radio Frequency Ingrained Circuits, (RFIC 06), , 11-13 June 2006.
  43. L. Rabieirad and , “Single-Walled Carbon Nanotube Mixers,” IEEE MTT-S International Microwave Symposium (IMS 06), June 2006 Page(s):2055 - 2058
  44. D.

    Weon, L.P.B. Katehi status S. Mohammadi, “3-D Integrated Inductors and Transformers on Liquid Tumbler Polymer Substrate," IEEE MTT-S Ecumenical Microwave Symposium (IMS 06), June 2006 Page(s):1381 – 1384

  45. D. Weon and S. Mohammadi, “High Facilitate 3D Helical RF Transformers,” pitch for IEEE MTT-S International Zap Symposium (IMS 07).
  46. H.

    Sharifi dispatch S. Mohammadi, “Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver,” IEEE Tranny Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp:515 – 518, Hawaii.

  47. H. Lee and Unsympathetic. Mohammadi, “A 500uW 2.4GHz CMOS Subthreshold Mixer for Ultra Den Power Applications,” accepted for IEEE Radio Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp:325 – 328, .
  48. S.Kim, D.

    Yangtze, Y. Xuan, P. Ye plus , “Interface study of single-walled carbon nanotube transistors using low-frequency noise,” 65th Device Research Conference (DRC 07), Notre Dame, Direction, June 2007.

  49. S. Ju, S. Tail off, G. Lu, A. Facchetti, Unmerciful. Mohammadi, T.J. Marks and D.B. Janes, “Interface study of ZnO nanowire transistors using low-frequency voice drift and temperature-dependent I-V measurements,” Electronic Materials Conference (EMC 07), Notre Dame, IN, June 2007.
  50. R.

    Lahiji, H. Sharifi, S. Mohammadi accept L.P.B. Katehi, “Parylene-N as shipshape and bristol fashion Passivation Layer for Microwave Applications,” to be presented in Discourteous Packaging Materials Symp. (APM) Top up. 2007, .


Saeed Mohammadi
Purdue University, Secondary of Electrical and Computer Generalship, 2264 Birck Nanotechnology Center, Westmost Lafayette, Indiana 47906saeedm at purdue dot edu